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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors B772 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM: 625 mW (Tamb=25) 1. EMITTER 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) VCE=-2V, IC= -100mA IC=-2A, IB= -0.2A IC=-2A, IB= -0.2A VCE= -5V, IC=-0.1A Transition frequency 3. BASE 123 unless otherwise specified) Test conditions MIN -40 -30 -6 -1 -10 -1 60 32 -0.5 -1.5 V V 400 TYP MAX UNIT V V V A A A Ic=-100A ,IE=0 IC= -10 mA , IB=0 IE= -100A, IC=0 VCB= -40 V, IE=0 VCE=-30 V, IB=0 VEB=-6V, IC=0 VCE= -2V, IC= -1A fT f = 10MHz 50 MHz CLASSIFICATION OF hFE(1) Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400 |
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